Semiconductor memory device

ABSTRACT

The SRAM cell is formed by an inverter circuit (P 1 , N 1 ) using a storage node V 2  as an input and a storage node V 1  as an output, a load transistor P 2  connected between a power source VDD and the storage node V 2  using the storage node V 1  as an input and the storage node V 2  as an output, an access transistor N 3  connected between a read bit line RBL and the storage node V 1 , and an access transistor N 4  connected between a write bit line WBL and the storage node V 2 . When the access transistor N 4  is controlled by a write word line WWL, the access transistor N 4  can be used as holding control means and writing means for the memory cell, making it possible to obtain a semiconductor device capable of operating at a high speed with a small number of elements.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. Ser. No.11/793,080 filed on Jun. 15, 2007 which is a '371 filing ofPCT/JP2005/023544 filed on Dec. 16, 2005 and claims the benefit ofpriority of Japanese Patent Application 2004-363946 dated Dec. 16, 2004,the entire contents of each of which are incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a semiconductor memory device, and moreparticularly to a semiconductor memory device capable of preventingcorruption of stored data in a reading operation with a minimum numberof transistors and operating at a very high speed and a very lowvoltage.

BACKGROUND ART

Recent semiconductor devices have not only been scaled up and speededup, but also been systematized by incorporating many functions. In orderto scale up and speed up semiconductor devices, transistors have beenmade finer, and operating speeds have been improved while power sourcevoltages have been reduced. Various types of function blocks including aCPU and various types of memory devices are combined with each other forsystematization. Those memory devices jointly mounted on system LSIs aresimilarly required to operate at a high speed and a low power sourcevoltage. For example, a Static Random Access Memory (SRAM), hereinafterabbreviated as SRAM, which is jointly mounted for applications of acache memory and the like, is similarly required to operate at a highspeed and a low power source voltage.

A conventional SRAM will be described with reference to FIG. 1. FIG. 1shows a conventional SRAM memory cell (hereinafter referred to as anSRAM cell) formed by six transistors. When a word line WL has a lowpotential, data can be held stably by forming a loop with two CMOS(Complementary Metal Oxide Semiconductor) inverters. Specifically, oneof the CMOS inverters uses a storage node V1 as an input and outputsinverse data of data stored in the storage node V1 to a storage node V2.The other of the CMOS inverters uses the storage node V2 as an input andoutputs inverse data of data stored in the storage node V2 to thestorage node V1.

When the word line WL is accessed and brought into a high potential,access transistors N3 and N4 are brought into conduction so as to readdata stored in the storage nodes V1 and V2 into bit lines BLT and BLN,thereby performing a reading operation of the memory. Conversely, datafrom the bit lines BLT and BLN are written into the storage nodes V1 andV2, thereby performing a writing operation of the memory.

However, there has been a problem that a rate of increase in delay timewhen a power source voltage Vdd is lowered in a conventional SRAM cellis larger than a rate of increase in delay time of a CMOS invertercircuit. Furthermore, a problem of corruption of stored data also ariseswhen a reading operation is performed at a low power source voltage.FIG. 2 shows the dependence of delay time (normalized delay time T) ofan SRAM cell and a CMOS inverter circuit on power source voltages (Vdd).In FIG. 2, a line A represents a delay time of an SRAM cell, and a lineB represents a delay time of a CMOS inverter circuit. A rate of increasein delay time of the SRAM cell becomes higher when a power sourcevoltage is lowered. Furthermore, if a reading operation is performed atnot more than a certain power source voltage (indicated by “a”), thenstored data are corrupted, so that the SRAM cell does not work.

The corruption of stored data in the reading operation will be describedwith reference to FIGS. 3A to 3C. FIG. 3A shows a waveform of the wordline WL, FIG. 3B shows a waveform of the storage nodes in a normalreading operation, and FIG. 3C shows a waveform of the storage nodeswhen data are corrupted in a reading operation. Here, it is assumed thatthe storage node V1 has a low potential “0” while the storage node V2has a high potential “1.” As shown in FIG. 3A, when the word line WL isaccessed and brought into a high potential, the storage nodes V1 and V2are brought into conduction with a pair of bit lines BLT and BLN via theaccess transistors N3 and N4. Thus, the low potential of the storagenode V1 is increased by the bit line BLT that has been pre-charged intoa high potential.

As shown in FIG. 3B, in a case of storage nodes in a normal cell, anormal reading operation is performed while a low potential “0” of astorage node is slightly increased from the ground potential. However,as shown in FIG. 3C, if the inverter circuit (transistors P2 and N2) hasa varied threshold voltage, which is low, then the potential of thestorage node V1 reaches the threshold voltage of the inverter circuit(transistors P2 and N2), thereby lowering a high potential “1” of thestorage node V2. The reduction in the storage node V2 causes furtherincrease of the potential of the storage node V1. As a result,corruption D of stored data is caused in a reading operation, and thestored data are overwritten with inverse data.

Generally, a Static Noise Margin (SNM) is used as an index for measuringthe stability of holding accessed data in an SRAM cell. As shown in FIG.4, an SRAM cell is separated into two inverters, and DC (direct current)characteristics are calculated for each inverter. When those two DCcharacteristics are superimposed so that a DC characteristic output ofone of the inverters serves as a DC characteristic input of the otherinverter, a butterfly curve is drawn. An SNM is defined as one side of amaximum square inscribed in this butterfly curve. When an SNM is 0 mV ormore, a normal reading operation is performed as shown in FIG. 3B. Whenan SNM is 0 mV or less, stored data are overwritten with inverse data ina reading operation as shown in FIG. 3C.

Predictions for the future of the SNM have been made in Reference 1 (A.J. Bhavnagarwala, “The impact of intrinsic device fluctuations on CMOSSRAM cell stability,” IEEE Journal of Solid State Circuit, Vol. 36, No.4, April 2001 (FIGS. 5, 10A, and 10B)). Specifically, when channellengths of transistors used are made shorter so that they are shiftedfrom 250 nm to 50 nm as shown in FIG. 5, an average of the SNMs is notonly decreased, but a deviation of the SNMs is increased. Accordingly,the worst value of the SNMs is considerably lowered. The worst value ofthe SNMs becomes below “0” in the illustrated example of 50 nm.Accordingly, stored data are corrupted when the word line WL is broughtinto a high potential in a reading operation.

Meanwhile, an SRAM having a read-only port has been proposed inReference 2 (H. Sakakibara, “A 750 MHz 144 Mb cache DRAM LSI with speedscalable design and programmable at-speed function-array BIST,” IEEEInternational Solid State Circuit Conference, 2003 (FIG. 1)). In thisSRAM, as shown in FIG. 6, a memory cell is formed by eight transistors,and a full swing is taken on a read-only bit line with a cell current ofthe memory cell. The original purpose of this system is to obtain animproved effect of operating speeds in further developed generations.Furthermore, corruption of stored data in a reading operation, whichwould become problematic in a conventional SRAM, is not caused becauseno electric charges flow from the bit line into storage nodes in thecell during the reading operation. Accordingly, an SRAM having thiscircuit structure can operate not only at a high speed but also withstability even in further developed generations.

In the conventional SRAM cell using six transistors as in Reference 1,the worst value of SNMs is lowered. Accordingly, there is a problem thatdata will become difficult to be stably held in future. On the otherhand, in the SRAM cell having a read-only port as in Reference 2, nocorruption of stored data is caused in a reading operation. However,there is a problem that a cell area is increased because the number oftransistors is eight and five control signals are required.

DISCLOSURE OF INVENTION

Problems to be Solved by the Invention

As described above, when the conventional SRAM cell formed by sixtransistors is made finer and configured to operate at a lower voltage,the SNMs thereof are reduced so that the SRAM cell does not operatestably. In order to form a memory cell capable of preventing corruptionof stored data in a reading operation, eight transistors and manycontrol signals are required. Accordingly, there is a problem that itscomponent area is increased.

The present invention has been made in order to improve theaforementioned problems. It is, therefore, an object of the presentinvention to provide a memory cell and a semiconductor memory devicewhich can implement, with a minimum number of transistors and a smallcomponent area, a memory capable of preventing corruption of stored datain a reading operation even in a case where an operation at a very highspeed or at a very low voltage is required.

Means for Solving the Problems

Effects of the invention: The SRAM cell is formed by the fivetransistors. The SRAM cell is formed by an inverter circuit using astorage node V2 as an input and a storage node V1 as an output, a loadtransistor connected between a power source and the second storage nodewith using the first storage node as an input, an access transistor N3connected between a read bit line and the storage node V1, and an accesstransistor N4 connected between a write bit line and the storage nodeV2. When the access transistor N4 is controlled by a write word lineWWL, it is possible to obtain an effect that data can be held in thememory cell. When the access transistor N4 is used as holding means andwriting means, it is possible to obtain a semiconductor device capableof operating at a high speed with a small number of elements.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit diagram of a conventional 6-transistor SRAM cell;

FIG. 2 is a graph showing dependence of delay time of a conventionalSRAM cell and a CMOS inverter on power source voltages;

FIGS. 3A to 3C are charts showing a reading operation of a conventionalSRAM cell;

FIG. 4 is an explanation graph of an SNM showing a stable operation in aconventional SRAM cell;

FIG. 5 is a graph showing dependence of SNMs in a conventional SRAM cellon channel lengths of transistors;

FIG. 6 is a circuit diagram of a conventional 8-transistor SRAM cell;

FIG. 7 is a diagram showing a circuit structure of an SRAM cell 1according to Embodiment 1 of the present invention;

FIG. 8A is a diagram explanatory of a storage node V1 of “0” in aholding state of the SRAM cell 1 in Embodiment 1;

FIG. 8B is a diagram explanatory of the storage node V1 of “1” in aholding state of the SRAM cell 1 in Embodiment 1;

FIG. 9 is a graph showing a gate voltage (Vgs)−drain current (Id) curveof transistors;

FIG. 10A is a diagram explanatory of a state of a storage node V2 of “1”and a write bit line WBL of “0” in a writing state of the SRAM cell 1 inEmbodiment 1;

FIG. 10B is a diagram explanatory of a state of a storage node V2 of “0”and a write bit line WBL of “1” in a writing state of the SRAM cell 1 inEmbodiment 1;

FIG. 11 is a graph showing an SNM (Static Noise Margin) according to thepresent invention;

FIG. 12A is a waveform chart explanatory of an operation (“0” reading)in Embodiment 1;

FIG. 12B is a waveform chart explanatory of an operation (“1” reading)in Embodiment 1;

FIG. 12C is a waveform chart explanatory of an operation (“0” writing)in Embodiment 1;

FIG. 12D is a waveform chart explanatory of an operation (“1” writing)in Embodiment 1;

FIG. 13 is a diagram showing a circuit structure of an SRAM cell 2according to Embodiment 2 of the present invention;

FIG. 14A is a waveform chart explanatory of an operation (“0” reading)in Embodiment 2;

FIG. 14B is a waveform chart explanatory of an operation (“1” reading)in Embodiment 2;

FIG. 14C is a waveform chart explanatory of an operation (“0” writing)in Embodiment 2;

FIG. 14D is a waveform chart explanatory of an operation (“1” writing)in Embodiment 2;

FIG. 15 is a diagram showing a circuit structure of a sense amplifierSA11 according to the present invention;

FIG. 16 is a diagram showing a circuit structure of a sense amplifierSA12 according to the present invention;

FIG. 17A is a waveform chart explanatory of an operation (“0” reading)in the sense amplifiers SA11 and SA12 shown in FIGS. 15 and 16;

FIG. 17B is a waveform chart explanatory of an operation (“1” reading)in the sense amplifiers SA11 and SA12 shown in FIGS. 15 and 16;

FIG. 17C is a waveform chart explanatory of an operation (“0” writing)in the sense amplifiers SA11 and SA12 shown in FIGS. 15 and 16;

FIG. 17D is a waveform chart explanatory of an operation (“1” writing)in the sense amplifiers SA11 and SA12 shown in FIGS. 15 and 16;

FIG. 18 is a diagram showing a circuit structure of a sense amplifierSA21 according to the present invention;

FIG. 19 is a diagram showing a circuit structure of a sense amplifierSA22 according to the present invention;

FIG. 20A is a waveform chart explanatory of an operation (“0” reading)in the sense amplifiers SA21 and SA22 shown in FIGS. 18 and 19;

FIG. 20B is a waveform chart explanatory of an operation (“1” reading)in the sense amplifiers SA21 and SA22 shown in FIGS. 18 and 19;

FIG. 20C is a waveform chart explanatory of an operation (“0” writing)in the sense amplifiers SA21 and SA22 shown in FIGS. 18 and 19;

FIG. 20D is a waveform chart explanatory of an operation (“1” writing)in the sense amplifiers SA21 and SA22 shown in FIGS. 18 and 19;

FIG. 21A is a diagram showing a sub-word driver SWD11 used in thepresent invention;

FIG. 21B is a diagram showing a write word line signal generationcircuit NR12 used in the sub-word driver SWD11;

FIG. 22A is a diagram showing a sub-word driver SWD12 used in thepresent invention;

FIG. 22B is a diagram showing a write word line signal generationcircuit NR12-1 used in the sub-word driver SWD12;

FIG. 23A is a diagram showing a sub-word driver SWD21 used in thepresent invention;

FIG. 23B is a diagram showing a write word line signal generationcircuit NR12-2 used in the sub-word driver SWD21;

FIG. 24A is a circuit structure diagram of a source potential generationcircuit SLC1 for supplying a low potential power source voltage SL tothe write word line signal generation circuit NR12-2 in the sub-worddriver SWD21;

FIG. 24B is a diagram showing an operation waveform of the sourcepotential generation circuit SLC1;

FIG. 25A is a circuit structure diagram of a source potential generationcircuit SLC2 for supplying a low potential power source voltage SL tothe write word line signal generation circuit NR12-2 in the sub-worddriver SWD21;

FIG. 25B is a diagram showing an operation waveform of the sourcepotential generation circuit SLC2;

FIG. 26A is a circuit structure diagram of an inverse write block signalgeneration circuit WPBC1;

FIG. 26B is a diagram showing an operation waveform of the inverse writeblock signal generation circuit WPBC1;

FIG. 26C is a circuit structure diagram of an inverse write block signalgeneration circuit WPBC2;

FIG. 26D is a diagram showing an operation waveform of the inverse writeblock signal generation circuit WPBC2;

FIG. 27 is a general view of a semiconductor memory device according tothe present invention;

FIG. 28 is a diagram showing a configuration example of a memory block 1in the semiconductor memory device;

FIG. 29 is a diagram showing another configuration example of the memoryblock 1 in the semiconductor memory device;

FIG. 30A is a chart explanatory of an operation (“0” reading) in anexample of the configuration shown in FIG. 28;

FIG. 30B is a chart explanatory of an operation (“1” reading) in theconfiguration shown in FIG. 28;

FIG. 30C is a chart explanatory of an operation (“0” writing) in theconfiguration shown in FIG. 28;

FIG. 30D is a chart explanatory of an operation (“1” writing) in theconfiguration shown in FIG. 28;

FIG. 31A is a chart explanatory of an operation (“0” reading) in anotherexample of the configuration shown in FIG. 28;

FIG. 31B is a chart explanatory of an operation (“1” reading) in theother example of the configuration shown in FIG. 28;

FIG. 31C is a chart explanatory of an operation (“0” writing) in theother example of the configuration shown in FIG. 28;

FIG. 31D is a chart explanatory of an operation (“1” writing) in theother example of the configuration shown in FIG. 28;

FIG. 32A is a chart explanatory of an operation (“0” reading) in anexample of the configuration shown in FIG. 29;

FIG. 32B is a chart explanatory of an operation (“1” reading) in theconfiguration shown in FIG. 29;

FIG. 32C is a chart explanatory of an operation (“0” writing) in theconfiguration shown in FIG. 29;

FIG. 32D is a chart explanatory of an operation (“1” writing) in theconfiguration shown in FIG. 29;

FIG. 33A is a chart explanatory of an operation (“0” reading) in anotherexample of the configuration shown in FIG. 29;

FIG. 33B is a chart explanatory of an operation (“1” reading) in theother example of the configuration shown in FIG. 29;

FIG. 33C is a chart explanatory of an operation (“0” writing) in theother example of the configuration shown in FIG. 29;

FIG. 33D is a chart explanatory of an operation (“1” writing) in theother example of the configuration shown in FIG. 29;

FIG. 34 is a diagram showing a specific example of the memory block 1 inthe semiconductor memory device;

FIG. 35 is a diagram showing another specific example of the memoryblock 1 in the semiconductor memory device;

FIG. 36A is a chart explanatory of an operation (“0” reading) in theconfiguration shown in FIG. 34;

FIG. 36B is a chart explanatory of an operation (“1” reading) in theconfiguration shown in FIG. 34;

FIG. 36C is a chart explanatory of an operation (“0” writing) in theconfiguration shown in FIG. 34;

FIG. 36D is a chart explanatory of an operation (“1” writing) in theconfiguration shown in FIG. 34;

FIG. 37A is a chart explanatory of an operation (“0” reading) in theconfiguration shown in FIG. 35;

FIG. 37B is a chart explanatory of an operation (“1” reading) in theconfiguration shown in FIG. 35;

FIG. 37C is a chart explanatory of an operation (“0” writing) in theconfiguration shown in FIG. 35; and

FIG. 37D is a chart explanatory of an operation (“1” writing) in theconfiguration shown in FIG. 35.

BEST MODE FOR CARRYING OUT THE INVENTION

A memory cell as a semiconductor memory device operable at a low powersource voltage and a very high speed according to the present invention,and a sense amplifier and a word driver as peripheral circuits thereofwill be described in detail with reference to the drawings.

(Embodiment 1)

Embodiment 1 of the present invention will be described below withreference to FIGS. 7 to 12D. FIG. 7 is a diagram showing a circuitstructure of an SRAM cell. FIGS. 8A and 8B are diagrams showing (a) astorage node V1 holding “0” and (b) a storage node V1 holding “1” in aholding state of the SRAM cell, FIG. 9 shows a gate voltage (Vgs)−draincurrent (Id) curve of transistors. FIGS. 10A and 10B are diagramsexplanatory of (a) erroneous writing in a state in which a storage nodeV2 holds “1” with a write bit line WBL of “0” and (b) erroneous writingin a state in which a storage node V2 holds “0” with a write bit lineWBL of “1” in a non-selected cell during a writing operation in the SRAMcell. FIG. 11 is a graph showing an SNM according to the presentinvention. FIGS. 12A to 12D are operation waveforms.

Hereinafter, SRAM cells are referred to as an SRAM cell 1 and an SRAMcell 2 if they are limited to SRAM cells in Embodiments 1 and 2, andsimply referred to as SRAM cells unless otherwise specified.

The SRAM cell 1 shown in FIG. 7 is formed by five transistors includinga PMOS transistor P1 and an NMOS transistor N1, which forms a CMOSinverter, a PMOS transistor P2, and NMOS transistors N3 and N4, whichserves as access means. The SRAM cell 1 differs from a conventional6-transistor SRAM cell in deletion of a drive transistor N2, separationof a word line into a read word line RWL and a write word line WWL, andprovision of a write-only bit line WBL.

The CMOS inverter is formed by the PMOS transistor P1 and the NMOStransistor N1. The CMOS inverter uses data of a storage node V2 as aninput and outputs data to a storage node V1. The PMOS transistor P1 hasa drain, a source, and a gate connected to the storage node V1, a powersource voltage, and the storage node V2, respectively. The NMOStransistor N1 has a drain, a source, and a gate connected to the storagenode V1, a ground potential, and the storage node V2, respectively. ThePMOS transistor P2 has a drain, a source, and a gate connected to thestorage node V2, the power source voltage, and the storage node V1,respectively.

The NMOS transistor N3 is connected between a read bit line RBL and thestorage node V1. The NMOS transistor N3 has a gate connected to a readword line RWL. The NMOS transistor N4 is connected between a write bitline WBL and the storage node V2. The NMOS transistor N4 has a gateconnected to a write word line WWL.

A method of holding data in operation of the memory cell in the presentembodiment will be described with reference to FIGS. 8A and 8B. FIG. 8Ashows a case in which the storage node V1 holds “0” and the storage nodeV2 holds “1.” Since the storage node V1 has “0,” the PMOS transistor P2is turned on. Because an on-state current Ion_P of the PMOS transistorP2 is larger than an off-state leakage current Ioff_N of the NMOStransistor N4, the storage node V2 is brought into a high level “1.”Since the storage node V2 has a high level “1,” the NMOS transistor N1is turned on, so that the storage node V1 is pulled down into a lowlevel “0.” The storage nodes V1 and V2 are stably held by turning thePMOS transistor P2 and the NMOS transistor N1 on.

FIG. 8B shows a case in which the storage node V1 holds “1” and thestorage node V2 holds “0.” Since the transistor N2 for holding thestorage node V2 at a low level “0” in the SRAM cell shown in FIG. 1 hasbeen deleted from the SRAM cell 1 shown in FIG. 7, a state of “1” on thestorage node V1 and “0” on the storage node V2 could not be held stably.In this regard, according to the present invention, the off-stateleakage current Ioff_N of the NMOS transistor N4 is set to be largerthan an off-state leakage current Ioff_P of the PMOS transistor P2. Thisallows the storage node V2 to be held at a low level “0.” When thestorage node V2 is held at a low level “0,” the PMOS transistor P1 isturned on, so that the storage node V1 can be held at a high level “1.”

Thus, an artificial inverter circuit outputting the storage node V2 isformed by the PMOS transistor P2 and the NMOS transistor N4. A highlevel “1” is outputted to the storage node V2 when the PMOS transistorP2 is turned on, whereas a low level “0” is outputted to the storagenode V2 when the PMOS transistor P2 is turned off.

The storage node V2 is held at a low level “0” by setting the off-stateleakage current Ioff_N of the NMOS transistor N4 to be larger than theoff-state leakage current Ioff_P of the PMOS transistor P2. Conversely,the storage node V2 is held at a high level “1” because the off-stateleakage current Ioff_N of the NMOS transistor N4 is smaller than theon-state current Ion_P of the PMOS transistor P2. Thus, magnitudes ofthese currents are expressed by Ioff_P<Ioff_N<Ion_P.

Here, it is desirable that the off-state leakage current Ioff_N of theNMOS transistor N4 be set to be about 100 times as large as theoff-state leakage current Ioff_P of the PMOS transistor P2. The reasonwhy the off-state leakage current Ioff_N is set to be about 100 times aslarge as the off-state leakage current Ioff_P is because therelationship of Ioff_P<Ioff_N is maintained even if the off-stateleakage current varies. For example, when the off-state leakage currentIoff_P of the PMOS transistor P2 is several pA, the off-state leakagecurrent Ioff_N of the NMOS transistor N4 is set to be about severalhundreds of pA to about several nA.

There are several methods to increase the off-state leakage currentIoff_N of the NMOS transistor N4. In a first method, the NMOS transistorN4 is formed by a transistor having a low threshold voltage Vth that islower than other normal threshold voltages (e.g., a threshold voltage ofthe NMOS transistor N3). When a threshold voltage is reduced by about0.2 V, the leakage current increases about 100 times. FIG. 9 shows gatevoltages (Vgs) and currents (Id) of a transistor having a normalthreshold voltage (Normal Vth) and a transistor having a low thresholdvoltage (Low Vth). When a gate voltage of the NMOS transistor N4 is setto be the GND potential, a ratio of leakage currents in the transistorhaving a normal threshold voltage (Normal Vth) and the transistor havinga low threshold voltage (Low Vth) becomes about 100.

In a second method, a threshold voltage Vth of the NMOS transistor N4 isset to be a normal threshold voltage, and a low level of the write wordline WWL is set to be 0.2 V higher than usual. When the low level of thewrite word line WWL is set to be 0.2 V higher, the leakage currentincreases about 100 times. In a third method, the first method and thesecond method are combined with each other. For example, the thresholdvoltage Vth of the NMOS transistor N4 is set to be 0.1 V lower thanusual while a low level of the write word line WWL is set to be 0.1 Vhigher than usual. This method can also increase the leakage currentIoff_N about 100 times.

As described above, the holding of an SRAM cell formed by fivetransistors can be achieved by setting an off-state leakage current ofthe access transistor N4 to be large. However, in the case of a largeoff-state leakage current, it is feared that data to be written into aselected SRAM cell will also be written into a non-selected SRAM cell inthe same block during a writing operation.

Cases in which data to be written into a selected SRAM cell 1 areerroneously written into a non-selected SRAM cell 1 will be describedwith reference to FIGS. 10A and 10B. FIG. 10A shows a case in which datastored in the non-selected SRAM cell 1 include “0” on the storage nodeV1 and “1” on the storage node V2 while “0” on WBL and “1” on RBL aresupplied as data to be written into a selected SRAM cell 1. In thiscase, the load transistor P2 is in an on-state and can supply a currentlarger than a leakage current of the access transistor N4. Accordingly,the high level of the storage node V2 is not lowered, and no erroneouswriting is caused.

FIG. 10B shows a case in which data stored in the non-selected SRAM cell1 include “1” on the storage node V1 and “0” on the storage node V2while “1” on WBL and “0” on RBL are supplied as data to be written intoa selected SRAM cell 1. Although the access transistor N4 is in anoff-state, the leakage current of the access transistor N4 is so largethat the storage node V2 is charged by the high level “1” of the writebit line WBL. Thus, the potential of the storage node V2 is increased,so that erroneous writing may be caused. Here, retention time is definedas a period of time during which the storage node V2 is increased to athreshold voltage of the drive transistor N1.

When the storage node V2 has a parasitic capacitance of 1 fF, the drivetransistor N1 has a threshold voltage of 0.3 V, the load transistor hasthe worst off-state leakage current of 100 pA, and the access transistorN4 has an off-state leakage current of 100 nA under the worstconditions, then the retention time is calculated as 1 fF×0.3 v/100.1nA≈3 ns. The storage node V2 is increased in 3 ns so as to turn thetransistor N2 on. Thus, the potential of the storage node V1 is loweredto thereby cause erroneous writing in the SRAM cell 1.

In order to prevent such erroneous writing, the low level of the writeword line WWL should be lowered in a writing operation so that theretention time is longer than a writing cycle. For example, if the lowlevel of the write word line WWL is lowered by 0.2 V, then the off-stateleakage current of the access transistor N4 is reduced to one hundredththereof so that it becomes 1 nA. In this case, the retention time iscalculated as 1 fF×0.3 v/1.1 nA=273 ns. Thus, erroneous writing can beprevented for a short writing cycle. The control of the word linepotential for the non-selected SRAM cell 1 will be described in detailin another embodiment. The selected SRAM cell 1 will be described in thepresent embodiment.

Operation of the SRAM cell 1 formed by five transistors in the presentembodiment will be described with reference to FIGS. 11 and 12A to 12D.FIG. 11 shows an SNM. As compared to a 6-transistor SRAM cell, the drivetransistor N2 is deleted, and an artificial inverter circuit is formedby the transistors P2 and N4. This artificial inverter circuit has ahigh threshold voltage, and the input-output characteristics thereof areshifted toward the power source voltage to a large extent. Anotherinverter circuit is formed by the transistors P1 and N1, and theinput-output characteristics thereof are the same as those of a usual6-transistor type. Accordingly, the SNM becomes asymmetric as shown inFIG. 11.

An operation margin is enlarged in a state where a low level “0” isstored on the storage node V1, in which stored data are likely to becorrupted in a reading operation with the read bit line RBL. Anoperation margin is reduced in a state where a high level “1” is storedon the storage node V1. However, in the state where a high level “1” isstored on the storage node V1 with a reduced operation margin, even ifthe read bit line RBL having a high level “1” is connected, nocorruption of stored data is caused. Accordingly, an erroneous operationcannot be performed. Therefore, an operation margin of the SRAM cell isenlarged. Furthermore, in a state where a high level “1” is stored onthe storage node V1, as described above, the storage node V2 can be heldat a low level “0” by setting the off-state leakage current of theaccess transistor N4 to be larger than the off-state leakage current ofthe load transistor P2.

FIGS. 12A to 12D show operation timing of the SRAM cell 1 according tothe present invention. FIGS. 12A to 12D illustrate (a) “0” readingoperation, (b) “1” reading operation, (c) “0” writing operation, and (d)“1” writing operation. Here, data stored on the storage node V1 of theSRAM cell 1 are defined as stored data of the SRAM cell 1. Furthermore,inverse data of data stored in the SRAM cell 1 are written in a writingoperation.

In the case of the “0” reading operation shown in FIG. 12A, the readword line RWL is activated to have a high level “1.” When the read wordline RWL is activated, the access transistor N3 is brought into anon-state, so that the read bit line RBL and the storage node V1 of theSRAM cell 1 are brought into conduction with each other. The potentialof the storage node V1 is slightly pulled up by the read bit line RBLthat has been charged at a pre-charge level “1.” However, the storagenode V1 is pulled down to a low level “0” together with the read bitline RBL by the drive transistor N1. Furthermore, since the read bitline RBL is pulled down to a low level, a data reading operation of thelow level “0” is performed.

In this case, an operation margin is enlarged because the drivetransistor N2 has been deleted and the high level “1” stored on thestorage node V2 is not discharged. After completion of the readingoperation, the read word line RWL is brought into a low level “0,” andthe read bit line RBL is pre-charged into a high level “1.” During thereading cycle, each of the write word line WWL and the write bit lineWBL is held at a low level “0” and is not varied.

In the case of the “1” reading operation shown in FIG. 12B, the readword line RWL is activated to have a high level “1.” When the read wordline RWL is activated, the access transistor N3 is brought into anon-state, so that the read bit line RBL and the storage node V1 of theSRAM cell 1 are brought into conduction with each other. Since the readbit line RBL charged at a pre-charge level “1” has the same level as thehigh level “1” stored on the storage node V1, a data reading operationof the high level “1” is directly performed. After completion of thereading operation, the read word line RWL is brought into a low level“0,” and the read bit line RBL is pre-charged at a high level “1.”During this reading cycle, each of the write word line WWL and the writebit line WBL is held at a low level “0” and is not varied.

In the case of the “0” writing operation shown in FIG. 12C, both of theread word line RWL and the write word line WWL are activated to have ahigh level “1.” Both of the access transistors N3 and N4 are broughtinto an on-state, the read bit line RBL is brought into conduction withthe storage node V1, and the write bit line WBL is brought intoconduction with the storage node V2. The low level “0” of the read bitline RBL is written into the storage node V1, and the high level “1” ofthe write bit line WBL is written into the storage node V2. Aftercompletion of the writing operation, the read word line RWL and thewrite word line WWL are brought into a low level “0.” Subsequently, theread bit line RBL is pre-charged into a high level “1,” and the writebit line WBL is pre-charged into a low level “0.”

In the case of the “1” writing operation shown in FIG. 12D, both of theread word line RWL and the write word line WWL are activated to have ahigh level “1.” Both of the access transistors N3 and N4 are broughtinto an on-state, the read bit line RBL is brought into conduction withthe storage node V1, and the write bit line WBL is brought intoconduction with the storage node V2. The high level “1” of the read bitline RBL is written into the storage node V1, and the low level “0” ofthe write bit line WBL is written into the storage node V2. Aftercompletion of the writing operation, the read word line RWL and thewrite word line WWL are brought into a low level “0.” Subsequently, theread bit line RBL is pre-charged at a high level “1,” and the write bitline WBL is pre-charged at a low level “0.”

In the present embodiment, the SRAM cell is formed by the fivetransistors. The SRAM cell is formed by an inverter circuit using astorage node V2 as an input and a storage node V1 as an output, a loadtransistor connected between a power source and the storage node V2 withusing the storage node V1 as an input, an access transistor N3 connectedbetween a read bit line and the storage node V1, and an accesstransistor N4 connected between a write bit line and the storage nodeV2. When the access transistor N4 is controlled by a write word lineWWL, the access transistor N4 can be used as holding control means andwriting means for the memory cell, making it possible to obtain asemiconductor device capable of operating at a high speed with a smallnumber of elements.

(Embodiment 2)

Embodiment 2 of the present invention will be described below withreference to FIGS. 13 and 14A to 14D. FIG. 13 shows a circuit structureof an SRAM cell 2 in Embodiment 2, and FIGS. 14A to 14D show itsoperation waveforms.

The SRAM cell 2 shown in FIG. 13 differs from the SRAM cell 1 inEmbodiment 1 in that a write bit line WBL is fixed to a ground potentialGND. Other components are the same as those in Embodiment 1.Accordingly, those components are denoted by the same reference numeralsas in Embodiment 1, and the details thereof are omitted.

When the SRAM cell 2 in Embodiment 2 is to be held, both of the readword line RWL and the write word line WWL are brought into a low level“0.” At that time, as with Embodiment 1, each of the storage nodes V1and V2 can be held by setting an off-state leakage current Ioff_N of theaccess transistor N4 under the conditions of Ioff_P<Ioff_N<Ion_P.

The operation will be described below with reference to FIGS. 14A to14D. FIGS. 14A to 14D show operation waveforms in (a) “0” readingoperation, (b) “1” reading operation, (c) “0” writing operation, and (d)“1” writing operation. In the cases of the “0” reading operation shownin FIG. 14A and the “1” reading operation shown in FIG. 14B, the storagenode V1 of “0” or “1” is read into the read bit line RBL by using theread word line RWL, the read bit line RBL, and the access transistor N3.As shown in FIGS. 14A and 14B, the operations are the same as those inEmbodiment 1, and the details thereof are omitted.

In Embodiment 1, a writing operation is performed on the SRAM cell 1 bycomplementary data input from the read bit line RBL and the write bitline WBL. However, in Embodiment 2, since the write bit line WBL isfixed to the ground potential, a short one-shot pulse is provided to thewrite word line WWL, and a writing level of the read bit line RBL iswritten into the storage node V1 after the storage node V2 is reset to alow level “0.”

In the case of the “0” writing operation shown in FIG. 14C, both of theread word line RWL and the write word line WWL are activated to have ahigh level “1.” Both of the access transistors N3 and N4 are broughtinto an on-state, and the storage node V1 is brought into conductionwith the read bit line RBL, so that a low level “0” of the read bit lineRBL is written into the storage node V1. On the other hand, the storagenode V2 is brought into an intermediate level because both of thetransistor P2 and the transistor N4 are turned on. At that time, thewrite word line WWL of a one-shot pulse is brought into a low level “0”so as to turn the transistor N4 off and pull the storage node V2 up to ahigh level “1.” Thus, “0” is written into the storage node V1, and “1”is written into the storage node V2. After completion of the writingoperation, the read word line RWL is brought into a low level “0.”Subsequently, the read bit line RBL is pre-charged into a high level“1.”

In the case of the “1” writing operation shown in FIG. 12D, both of theread word line RWL and the write word line WWL are activated to have ahigh level “1.” Both of the access transistors N3 and N4 are broughtinto an on-state, and the storage node V1 is brought into conductionwith the read bit line RBL, so that a high level “1” of the read bitline RBL is written into the storage node V1. On the other hand, thestorage node V2 is brought into the ground potential GND by the accesstransistor N4, and a low level “0” is written into the storage node V2.Here, since the transistor P2 is in an off-state, a low level “0” iswritten into the storage node V2 without having pulled the storage nodeV2 up to an intermediate level. While the write word line WWL has a highlevel, “1” is written into the storage node V1 and “0” is written intothe storage node V2. Only the write word line WWL is brought into a lowlevel “0” so as to turn the transistor N4 off. Subsequently, the readword line RWL is brought into a low level “0,” and the read bit line RBLis pre-charged at a high level “1.”

In the present embodiment, the SRAM cell is formed by the fivetransistors. The SRAM cell is formed by an inverter circuit using astorage node V2 as an input and a storage node V1 as an output, a loadtransistor connected between a power source and the storage node V2 withusing the storage node V1 as an input and the storage node V2 as anoutput, an access transistor N3 connected between a read bit line andthe storage node V1, and an access transistor N4 connected between theground potential and the storage node V2. When the access transistor N4is controlled by a one-shot write word line WWL, the access transistorN4 can be used as holding control means and writing means for the memorycell, making it possible to obtain a semiconductor device capable ofoperating at a high speed with a small number of elements.

(Embodiment 3)

Embodiment 3 of the present invention is an embodiment in which a senseamplifier for communicating data with a memory cell and an input-outputcircuit is added to the SRAM cell 1. In the present embodiment, a datareading operation is performed by one bit line of the read bit line RBL,and a data writing operation is performed by two bit lines of the readbit line RBL and the write bit line WBL. A sense amplifier SA11 performsdata transmission to an input-output circuit via one line of a data lineDL, and a sense amplifier SA12 performs data transmission to aninput-output circuit via two lines of a read data line RDL and a writedata line WDL. FIG. 15 shows a circuit structure diagram of the senseamplifier SA11, FIG. 16 shows a circuit structure diagram of the senseamplifier SA12, and FIGS. 17A to 17D show their operation waveforms.

The circuit structure of the sense amplifier SA11 shown in FIG. 15 willbe described. An output BLB of an inverter IV1, to which data areinputted through the read bit line RBL from the memory cell, is inputtedto gates of a PMOS transistor P12 and an NMOS transistor N12. The PMOStransistor P12 has a source connected to a power source voltage VDD anda drain connected to the read bit line RBL. The PMOS transistor P12serves as a transistor for maintaining a bit line high level to maintainthe read bit line RBL at a high level when it is turned on. The NMOStransistor N12 serves as a read transistor having a source connected toa ground potential GND and a drain connected to the data line DL.

A write NMOS transistor N13 having a gate to which a write enable signalWE is inputted is connected between the data line DL and the read bitline RBL. Furthermore, an output of a NOR circuit NR1, to which aninverse write enable signal WEB and the data line DL are inputted, isconnected to the write bit line WBL. The input of the inverse writeenable signal WEB into the NOR circuit NR1 allows the NOR circuit NR1 topre-charge and fix the write bit line WBL of its output into a low level“0” except in a writing operation. Furthermore, a source, a drain, and agate of a PMOS transistor P13 for pre-charge are connected to the powersource voltage VDD, the read bit line WBL, and a pre-charge signal PC,respectively.

In a basic operation of the sense amplifier SA11, data are read from thememory cell into the read bit line RBL and transmitted via the inverterIV1 and the read transistor N12 to the data line DL in a readingoperation. In a writing operation, data from the data line DL are passedthrough the transistor N13 and the NOR circuit NR1, and complementarydata are transmitted to the read bit line RBL and the write bit line WBLand written into the memory cell. The level maintaining transistor P12and the pre-charge transistor P13 operate to complement theseoperations.

The sense amplifier SA12 shown in FIG. 16 is configured such that thedata line DL in the sense amplifier SA11 shown in FIG. 15 is separatedinto a write data line WDL and a read data line RDL. The write data lineWDL is connected to a write transistor N13, and the read data line RDLis connected to a read transistor N12. The deference between the senseamplifiers SA11 and SA12 results from the arrangement of theinput-output circuits. However, the sense amplifiers SA11 and SA12perform the same basic operation as a sense amplifier. The senseamplifier SA11 is used when the input-output circuit not illustrated hasboth functions of input and output, whereas the sense amplifier SA12 isused when the input-output circuit is separated into an input circuitand an output circuit.

FIGS. 17A to 17D illustrate operation waveforms showing one embodimentof the operation in the sense amplifier SA11. Memory cells to which thesense amplifier SA11 can be applied are not limited to specific ones.However, application to the memory cell of the first embodiment will bedescribed as one embodiment of the operation.

In the cases of a “0” reading operation shown in FIG. 17A and a “1”reading operation shown in FIG. 17B, the write word line WWL and thewrite enable signal WE remains a low level “0” and the inverse writeenable signal WEB remains a high level “1” during a reading period.Accordingly, an operation of the sense amplifier SA11 is controlled bythe pre-charge signal PC and the read word line RWL. The pre-chargesignal is brought into a high level “1,” so that the transistor P13 isturned off. Thus, a pre-charge operation is completed. The read wordline RWL is brought into a high level “1” so as to bring the memory cellinto conduction with the read bit line RBL. Thus, data of “0” or “1” inthe memory cell are read into the read bit line RBL. Furthermore, thedata are read into the data line DL via the inverter IV1 and the readtransistor N12.

In the cases of a “0” writing operation shown in FIG. 17C and a “1”writing operation shown in FIG. 17D, the pre-charge signal PC and thewrite enable signal WE are changed into a high level “1,” whereas theinverse write enable signal WEB is changed into a low level “0.”Accordingly, the pre-charge transistor P13 is turned off. Thus, apre-charge operation to the read bit line RBL is completed. Furthermore,a low level fixation operation of the write bit line WBL with the NORcircuit NR1 is completed. Data are transmitted from the data line DL viathe write transistor N13 to the read bit line RBL, and inverse data ofthe data line DL are transmitted via the NOR circuit NR1 to the writebit line WBL.

The selected read word line RWL and write word line WWL are brought intoa high level “1,” and complementary data are written into the storagenodes V1 and V2 in the memory cell. After completion of the writingoperation, the pre-charge signal PC, the write enable signal WE, theread word line RWL, and the write word line WWL are changed into a lowlevel “0,” and the inverse write enable signal WEB is changed into ahigh level “1.” Thus, the data line DL and the read bit line arepre-charged into a high level “1,” and the write bit line arepre-charged into a low level.

The operation of the sense amplifier SA11 has been described above. Withregard to the sense amplifier SA12, as shown within parentheses of thedata line DL in FIGS. 17A to 17D, the data line DL can be read as theread data line RDL in the reading operations and as the write data lineWDL in the writing operations. Accordingly, the details of the operationof the sense amplifier SA12 are omitted.

The sense amplifier in the present embodiment performs data transmissionto the memory cell with one bit line of the read bit line in the readingoperation and with two bit lines of the read bit line and the write bitline in the writing operation. It is possible to obtain a senseamplifier capable of operating at a high speed, which is formed by aninverter circuit to which stored data of a memory cell are inputted froma bit line, a read transistor for transmitting an output of the invertercircuit to a data line, a transistor for maintaining a bit line highlevel to maintain the bit line at a high potential when the output ofthe inverter circuit has a low potential, writing means for transmittingwrite data and their inverse data to a read bit line and a write bitline, respectively, and means for pre-charging the read and write bitlines into a high potential and a low potential, respectively, when theread and write bit lines are ineffective.

(Embodiment 4)

Embodiment 4 of the present invention is an embodiment in which a senseamplifier for communicating data with a memory cell and an input-outputcircuit is added to the SRAM cell 2. FIG. 18 shows a circuit structurediagram of a sense amplifier SA21, FIG. 19 shows a circuit structurediagram of a sense amplifier SA22, and FIGS. 20A to 20D show theiroperation waveforms. The sense amplifier SA21 performs data transmissionto an input-output circuit via one line of a data line, and the senseamplifier SA22 performs data transmission to an input-output circuit viatwo lines of a read data line and a write data line.

In the sense amplifier SA21 shown in FIG. 18, an output BLB of aninverter IV1, to which data are inputted through the read bit line RBLfrom the memory cell, is inputted to gates of a PMOS transistor P12 andan NMOS transistor N12. The PMOS transistor P12 has a source connectedto a power source voltage VDD and a drain connected to the read bit lineRBL. The PMOS transistor P12 serves as a transistor for maintaining abit line high level to maintain the read bit line RBL at a high levelwhen it is turned on. The NMOS transistor N12 serves as a readtransistor having a source connected to a ground potential GND and adrain connected to a data line DL.

A write NMOS transistor N13 having a gate to which a write enable signalWE is inputted is connected between the data line DL and the read bitline RBL. Furthermore, a source, a drain, and a gate of a PMOStransistor P13 for pre-charge are connected to the power source voltageVDD, the read bit line WBL, and a pre-charge signal PC, respectively.

In a basic operation of the sense amplifier SA21, data are read from thememory cell into the read bit line RBL and transmitted via the inverterIV1 and the read transistor N12 to the data line DL in a readingoperation. In a writing operation, data are transmitted from the dataline DL via the transistor N13 to the read bit line RBL and written intothe memory cell. The level maintaining transistor P12 and the pre-chargetransistor P13 operate to complement these operations.

The sense amplifier SA22 shown in FIG. 19 is configured such that thedata line DL in the sense amplifier SA21 shown in FIG. 18 is separatedinto a write data line WDL and a read data line RDL. The write data lineWDL is connected to a write transistor N13, and the read data line RDLis connected to a read transistor N12. The deference between the senseamplifiers SA21 and SA22 results from the arrangement of theinput-output circuits. However, the sense amplifiers SA11 and SA12perform the same basic operation as a sense amplifier. The senseamplifier SA21 is used when the input-output circuit has both functionsof input and output, whereas the sense amplifier SA22 is used when theinput-output circuit is separated into an input circuit and an outputcircuit.

FIGS. 20A to 20D illustrate operation waveforms showing one embodimentof the operation in the sense amplifier SA21. Memory cells to which thesense amplifier SA21 can be applied are not limited to specific ones.However, application to the memory cell of the second embodiment will bedescribed as one embodiment of the operation.

In the cases of a “0” reading operation shown in FIG. 20A and a “1”reading operation shown in FIG. 20B, the write word line WWL and thewrite enable signal WE remains a low level “0” during a reading cycle.Accordingly, an operation of the sense amplifier SA21 is controlled bythe pre-charge signal PC and the read word line RWL. The pre-chargesignal PC is brought into a high level “1,” so that the transistor P13is turned off. Thus, a pre-charge operation is stopped. The read wordline RWL is brought into a high level “1” so as to bring the memory cellinto conduction with the read bit line RBL. Thus, data of “0” or “1” inthe memory cell are read into the read bit line RBL. Furthermore, thedata are read into the data line DL via the inverter IV1 and the readtransistor N12.

In the case of a “0” writing operation shown in FIG. 20C, the pre-chargesignal PC and the write enable signal WE are changed into a high level“1,” so that the pre-charge transistor P13 is turned off. Thus, apre-charge operation to the read bit line RBL is completed. Data aretransmitted from the data line DL via the write transistor N13 to theread bit line RBL.

The selected read word line RWL and write word line WWL are brought intoa high level “1,” so that data “0” from the read bit line RBL arewritten into the storage node V1 of the memory cell. The storage node V2of the memory cell is brought into an intermediate level by a currentpath between the load transistor P2 and the access transistor N4. Atthat time, the write word line WWL of a one-shot pulse is changed into alow level “0,” so that the transistor N4 is turned off. Since the loadtransistor P2 is in an on-state, a high level “1” is written into thestorage node V2.

After completion of the writing operation, the pre-charge signal PC, thewrite enable signal WE, the read word line RWL, and the write word lineWWL are changed into a low level “0,” and the data line DL and the readbit line are pre-charged into a high level “1.”

In the case of a “1” writing operation shown in FIG. 20D, the pre-chargesignal PC and the write enable signal WE are changed into a high level“1,” so that the pre-charge transistor P13 is turned off. Thus, apre-charge operation to the read bit line RBL is completed. Data aretransmitted from the data line DL via the write transistor N13 to theread bit line RBL.

The selected read word line RWL and write word line WWL are brought intoa high level “1,” so that data “1” from the read bit line RBL arewritten into the storage node V1 of the memory cell and a low level “0”is written into the storage node V2 of the memory cell. The write wordline WWL is brought into a low level “0.” After completion of thewriting operation, the pre-charge signal PC, the write enable signal WE,and the read word line RWL are changed into a low level “0,” and thedata line DL and the read bit line are pre-charged at a high level “1.”

The operation of the sense amplifier SA21 has been described above. Withregard to the sense amplifier SA22, as shown within parentheses of thedata line DL in FIGS. 20A to 20D, the data line DL can be read as theread data line RDL in the reading operations and as the write data lineWDL in the writing operations. Accordingly, the details of the operationof the sense amplifier SA22 are omitted.

The sense amplifier in the present embodiment performs data transmissionto the memory cell with one bit line of the read bit line. It ispossible to obtain a sense amplifier formed by an inverter circuit towhich stored data of a memory cell are inputted from a bit line, a readtransistor for transmitting an output of the inverter circuit to a dataline, a transistor for maintaining a bit line high level to maintain thebit line at a high potential when the output of the inverter circuit hasa low potential, a write transistor for transmitting write data to aread bit line, and means for pre-charging the read bit line into a highpotential when the read bit line is ineffective.

(Embodiment 5)

A structure of a sub-word driver circuit for generating signals for aread word line RWL and a write word line WWL and a control signal usedin a sub-word decoder circuit will be described in Embodiment 5 of thepresent invention. FIGS. 21A and 21B show a sub-word driver SWD11 and awrite word line signal generation circuit NR12 in the sub-word driverSWD11. FIGS. 22A and 22B show a sub-word driver SWD12 and a write wordline signal generation circuit NR12-1 in the sub-word driver SWD12.FIGS. 23A and 23B show a sub-word driver SWD21 and a write word linesignal generation circuit NR12-2 in the sub-word driver SWD21.

Furthermore, FIGS. 24A and 24B show a first source potential generationcircuit SLC1 and its operation waveform. FIGS. 25A and 25B show a secondsource potential generation circuit SLC2 and its operation waveform.FIGS. 26A and 26B show a first generation circuit WPBC1 for an inversewrite block signal and its operation waveform. FIGS. 26C and 26D show asecond generation circuit WPBC2 and its operation waveform.

Here, the sub-word driver SWD11 will be described in detail withreference to FIG. 21A. The sub-word driver SWD11 is formed by NORcircuits NR11 and NR12. An inverse main word line WLB and an inverseread block signal RPB are inputted to the NOR circuit NR11, whichoutputs a read word line signal to a read word line RWL. An inverse mainword line WLB and an inverse write block signal WPB are inputted to theNOR circuit NR12, which outputs a write word line signal to a write wordline WWL.

In a reading operation, a sub-word driver in which both of the inversemain word line WLB and the inverse read block signal RPB are broughtinto a low level “0” is selected so that the read word line RWL isactivated so as to have a high level “1.” In a writing operation, asub-word driver in which all of the inverse main word line WLB, theinverse read block signal RPB, and the inverse write block signal WPBare brought into a low level “0” is selected so that the read word lineRWL and the write word line WWL are both activated to have a high level“1.” At the time of reading or writing, a row of the memory cell arrayto which a main word signal and a block signal are inputted is selectedand activated so that a reading or writing operation is performed.

Next, the NOR circuit NR12 for generating a write word line signal onthe write word line WWL will be described in detail with reference toFIG. 21B. A source, a drain, and a gate of a PMOS transistor P22 areconnected to a power source voltage VDD, a source of a transistor P21,and the inverse write block signal WPB, respectively. The source, adrain, and a gate of the PMOS transistor P21 are the drain of the PMOStransistor P22, a drain of a transistor N21, and an inverse main wordline WLB, respectively. A source, the drain, and a gate of the NMOStransistor N21 are connected to a ground potential GND, the drain of thetransistor P21, and the inverse main word line WLB, respectively. Asource, a drain, and a gate of an NMOS transistor N22 are connected tothe ground potential GND, the drain of the transistor P21, and theinverse write block signal WPB, respectively.

With such a circuit structure, the write word line WWL is outputted fromthe source of the PMOS transistor P21 and the sources of the NMOStransistors N21 and N22. When both of the inverse main word line WLB andthe inverse write block signal WPB have a low level “0,” the PMOStransistors P21 and P22 are in an on-state and the NMOS transistors N21and N22 are in an off-state. Thus, the write word line WWL as an outputof the NOR circuit NR12 outputs a high level “1” of the power sourcevoltage VDD. A memory cell connected to this write word line WWL isselected. When either one of the inverse main word line WLB and theinverse write block signal WPB has a high level “1,” the write word lineWWL outputs a low level “0” of the ground potential GND.

When FIGS. 21A and 21B, FIGS. 22A and 22B, and FIGS. 23A and 23B arecompared with each other, the transistors (P21, P22, N21, and N22)forming an NOR circuit for generating a write word line signal on thewrite word line WWL and the high potential power sources connected (thepower source voltage VDD) are the same in the sub-word drivers SWD11,SWD12, and SWD21, but the low potential power sources connected (GND,VS2, and SL) are different from each other. The NOR circuit NR12 in thesub-word driver SWD11 shown in FIGS. 21A and 21B is connected to a lowpotential power source outputting the ground potential GND. The NORcircuit NR12-1 in the sub-word driver SWD12 shown in FIGS. 22A and 22Bis connected to a low potential power source VS2 outputting a powersource voltage that is 0.1 V to 0.2 V higher than the ground potentialGND. The NOR circuit NR12-2 in the sub-word driver SWD21 shown in FIGS.23A and 23B is connected to a low potential power source SL having avariable power source voltage.

In FIG. 22B, the NOR circuit NR12-1 outputs a high level “1” of thepower source voltage VDD and a low level “0” of the low potential powersource VS2. Other components and operations are the same as those inFIGS. 21A and 21B, and the details thereof are omitted.

In FIG. 23B, the low potential power source SL of the NOR circuit NR12-2varies its output voltage (source potential) from the ground potentialGND to a negative potential VS1 in a writing operation (FIGS. 24A and24B). Alternatively, the low potential power source SL varies its outputvoltage (source potential) from a positive potential VS2 to the groundpotential GND in a writing operation (FIGS. 25 and 25B).

The source potential generation circuits (low potential power sourcevoltage generation circuits) shown in FIGS. 24A, 24B, 25A, and 25B bringone selected word line in a block selected by the sub-word drivercircuit into a high level “1” in a writing operation but reduce a lowlevel “0” in the selected block to a lower potential. By applying such alow level “0” output to the gate of the access transistor N4 (FIG. 7) inthe SRAM cell, it is possible to reduce a leakage current of the accesstransistor N4 and prevent erroneous writing.

The first source potential generation circuit SLC1 shown in FIG. 24Ausually outputs the ground potential GND as a low level “0” but outputsa low level “0” reduced to a negative potential VS1 for a selected blockin a writing operation as shown in FIG. 24B.

The source potential generation circuit SLC1 is formed by an NOR circuitNR21 to which the inverse write block signal WPB and the inverse writeenable signal WEB are inputted, an inverter circuit IV21 to which anoutput of the NOR circuit NR21 is inputted, a transistor N23, and atransistor N24. A drain, a source, and a gate of the transistor N23 areconnected to the low potential power source SL (FIG. 23B), a negativepotential VS1, and the output of the NOR circuit NR21, respectively. Adrain, a source, a gate of the transistor N24 are connected to the lowpotential power source SL (FIG. 23B), the ground potential GND, and theinverter circuit W21, respectively.

When the inverse write block signal WPB or the inverse write enablesignal WEB has a high level “1,” the NOR circuit NR21 is brought into alow level. Thus, the transistor 24 is turned on, whereas the transistor23 is turned off. Accordingly, the source potential generation circuitSLC1 outputs the ground potential GND. When the inverse write blocksignal WPB and the inverse write enable signal WEB have a low level “0,”the NOR circuit NR21 outputs a high level “1.” Thus, the transistor 24is turned off, whereas the transistor 23 is turned on. Accordingly, thesource potential generation circuit SLC1 outputs the negative potentialVS1.

When the memory cell is not accessed, the source potential generationcircuit SLC1 outputs the ground potential GND as the low potential powersource SL. Here, a corresponding block is selected, and both of theinverse write enable signal WEB and the inverse write block signal WPBare changed into a low level “0.” This means that one word line isselected in the same block during a writing cycle. At that time, thenegative potential VS1 is outputted as a low potential power source tothe write word line of the selected block. A high level “1” is outputtedto the selected write word line in the selected block, whereas thenegative potential VS1 is outputted as a low level “0” to thenon-selected write word line in the selected block.

The second source potential generation circuit SLC2 shown in FIG. 25Ausually outputs the positive potential VS2 as a low level “0” butoutputs a low level “0” reduced to the ground potential GND for aselected block in a writing operation as shown in FIG. 25B.

The source potential generation circuit SLC2 differs from the sourcepotential generation circuit SLC1 in connection of the sources of thetransistor N23 and the transistor N24. The source of the transistor N23is connected to the ground potential GND, and the source of thetransistor N24 is connected to the low potential power source VS2. Othercomponents are the same. Accordingly, the source potential generationcircuit SLC2 outputs the ground potential GND as the low potential powersource SL when both of the inverse write block signal WPB and theinverse write enable signal WEB have a low level “0” and outputs the lowpower source voltage VS2 as the low potential power source SL when bothof the inverse write block signal WPB and the inverse write enablesignal WEB have other input levels.

With the aforementioned source potential generation circuits (lowpotential power source voltage generation circuits) SLC1 and SLC2, a lowlevel “0” of the write word line WWL for a selected block can be reducedto a voltage value lower than a usual level in a writing operation. Byusing a sub-word driver employing such a source potential generationcircuit, it is possible to prevent erroneous writing to a memory cell.

Next, a generation circuit for the inverse write block signal WPB willbe described in detail with reference to FIGS. 26A to 26D.

In FIG. 26A, a first inverse write block signal generation circuit WPBC1generates the inverse write block signal WPB. The first inverse writeblock signal generation circuit WPBC1 is a circuit for generating aninverse write block signal WPB of a low level for a selected blockduring a writing cycle. The first inverse write block signal generationcircuit WPBC1 is formed by a NAND circuit to which an inverse signal ofthe inverse read block signal RPB and the write enable signal WE areinputted. As shown in FIG. 26B, when the inverse read block signal RPBhas a low level “0” and the write enable signal WE has a high level “1,”then the inverse write block signal WPB outputs a low level. The inversewrite block signal WPB outputs a high level for other logic inputs.

In FIG. 26C, a second inverse write block signal generation circuitWPBC2 is a circuit for generating an inverse write block signal WPB of aone-shot low level only at an initial stage of a writing period. Ascompared to WPBC1 shown in FIG. 26A, an inverse signal of a delay writeenable signal WE2, which is generated by delaying the write enablesignal, is additionally inputted a NAND circuit. The delay write enablesignal is a signal generated by delaying the write enable signal WE by aperiod of time corresponding to the width of a desired one-shot pulse.As shown in FIG. 26D, when the inverse read block signal RPB has a lowlevel “0,” the write enable signal WE has a high level “1,” and thedelay write enable signal WE2 has a low level “0,” then the inversewrite block signal WPB outputs a low level. The inverse write blocksignal WPB outputs a high level for other logic inputs. Accordingly, aone-shot pulse is generated so that a low level is held only for thedelay time between the write enable signal WE and the delay write enablesignal WE2.

With the inverse write block generation circuits shown in FIGS. 26A and26C, an inverse write block signal for a selected block can be obtainedfrom a write enable signal and an inverse read block signal.Furthermore, an inverse write block signal of a one-shot pulse can beobtained by inputting a delayed write enable signal.

(Embodiment 6)

An example of a semiconductor memory device in which the senseamplifiers and the sub-word drivers are combined with the SRAM cell 1 inthe first embodiment will be described in Embodiment 6 of the presentinvention with reference to FIGS. 27 to 33D. However, semiconductormemory devices in which the sense amplifiers and the sub-word driversare applicable to the SRAM cell are not limited to the semiconductormemory device in the present invention. As a matter of course, those maybe combined with and applied to various types of semiconductor memorydevices.

FIG. 27 shows a main configuration of a semiconductor memory device. Thesemiconductor memory device is formed by a main word driver 2, aY-decoder and data input/output part 3, and a control circuit 4, whichare disposed around a memory array in which memory blocks 1 each having(m-word)×(n-bit) configuration are arranged with M rows and N columns.

FIG. 28 shows a configuration example of the memory block 1 shown inFIG. 27. The memory block 1 is formed by sub-word drivers 12, senseamplifiers 13, and a control part 14, which are disposed around a memorycell array 11 having (m-word)×(n-bit) configuration. The sub-word driver12 selects one word line of the memory cell array 11 with using aninverse main word line WLB inputted from the main word driver 2, aninverse read block signal RPB, and an inverse write block signal WPB.The sense amplifier 13 amplifies a signal of a bit line connected to thememory cell array 11 and transmits it to a data line of the Y-decoderand data input/output part 3 in a reading operation. Conversely, thesense amplifier 13 writes a signal from the data line into the memorycell array in a writing operation. The control part 14 includes thereina wiring portion for a pre-charge signal PC, a write enable signal WE,an inverse write enable signal WEB, the inverse read block signal RPB,and the inverse write block signal WPB or an amplifier circuit forcontrol signals thereof. Furthermore, when the inverse write blocksignal generation circuit WPBC1 is disposed in the control part 14 sothat an inverse write block signal WPB is generated within the controlpart 14, it is possible to omit a write block signal WPB outputted fromthe Y-decoder and data input/output part 3 and inputted to the controlpart 14.

FIG. 29 shows another configuration example of the memory block 1 shownin FIG. 27, in which generation circuits SLC for a low potential powersource SL for sub-word drivers are disposed in a control part 14. Othercomponents are the same as those in FIG. 28. In the case of FIG. 28, anoperation cycle is shorter than a retention time so that no erroneouswriting is caused, and a ground potential GND or a low potential powersource VS2 having a constant level is applied as a low level “0” to thesub-word drivers. In the case of FIG. 29, an operation cycle is longerthan a retention time so that erroneous writing may be caused, and thesource potential generation circuits are used because the potential of anon-selected word line in a selected block should be changed to a lowervoltage for a low level “0” of the sub-word drivers in a writingoperation.

Now, it is assumed that the access transistor N4 of the SRAM cell 1 is alow threshold voltage transistor, that a retention time of the storagenode V2 in the SRAM cell 1 is longer than a writing time even if a lowlevel from the sub-word driver has a ground potential, and that noerroneous writing is caused in a non-selected cell in a writingoperation. In this case, a semiconductor memory device in which the SRAMcells 1, the sub-word drivers SWD11, and the sense amplifiers SA11 orSA12 are combined with each other is used as the memory cell in theconfiguration shown in FIG. 28.

FIGS. 30A to 30D show operation waveforms of (a) “0” reading operation,(b) “1” reading operation, (c) “0” writing operation, and (d) “1”writing operation in a memory cell of a semiconductor memory device inwhich the SRAM cells 1, the sub-word drivers SWD11, and the senseamplifiers SA11 or SA12 are combined with each other as described above.Here, the sense amplifier SA11 has only one line of the data line DL,whereas the sense amplifier SA12 has separated lines of the read dataline RDL and the write data line WDL. Accordingly, for the senseamplifier SA12, the data line DL can be read as RDL in the readingoperations and as WDL in the writing operations.

FIGS. 30A and 30B show waveforms of the “0” and “1” reading operations.The pre-charge signal PC is brought into a high level so that apre-charge operation is completed. The read word line RWL is broughtinto a high level so as to bring the access transistor N3 intoconduction. The stored data “0” or “1” of the storage node V1 in thememory cell are read into the read bit line RBL, amplified by the senseamplifier, and transmitted to the data line. Thus, a reading operationis performed. At that time, signals for writing do not change. Theseoperations are the same as the operations of the sense amplifiers SA11and SA12 (the same as those in FIGS. 17A to 17D).

FIGS. 30C and 30D show waveforms of the “0” and “1” writing operations.FIGS. 30C and 30D illustrate waveforms both for a selected cell in whicha word line has been selected and for a non-selected cell that has notbeen selected. Those operation waveforms are the same as in theoperations of the sense amplifiers SA11 and SA12 and are the same asthose in FIGS. 17A to 17D. Accordingly, the details of those operationwaveforms are omitted.

Next, it is assumed that the access transistor N4 of the SRAM cell 1 isa normal threshold voltage transistor, that a retention time of thestorage node V2 in the SRAM cell 1 is longer than a writing time even ifa low level from the sub-word driver has a low potential power source,and that no erroneous writing is caused in a non-selected cell in awriting operation. In this case, a semiconductor memory device in whichthe SRAM cells 1, the sub-word drivers SWD12, and the sense amplifiersSA11 or SA12 are combined with each other is used as the memory cell inthe configuration shown in FIG. 28.

FIGS. 31A to 31D show operation waveforms of (a) “0” reading operation,(b) “1” reading operation, (c) “0” writing operation, and (d) “1”writing operation in a memory cell of a semiconductor memory device inwhich the SRAM cells 1, the sub-word drivers SWD12, and the senseamplifiers SA11 or SA12 are combined with each other. This configurationdiffers from the components of the semiconductor memory deviceexhibiting the operation waveforms shown in FIGS. 30A to 30D only inthat the sub-word drivers SWD11 are changed to SWD12. Accordingly, thelow level of the write word line WWL is only changed to the lowpotential power source VS2 in the sub-word driver SWD12. Other operationwaveforms are the same as in FIGS. 30A to 30D, and the details of theoperation waveforms are omitted.

Next, it is assumed that the access transistor N4 of the SRAM cell 1 isa low threshold voltage transistor, that a retention time of the storagenode V2 in the SRAM cell 1 is shorter than a writing time even if a lowlevel from the sub-word driver has a ground potential GND, and thaterroneous writing is caused in a non-selected cell in a writingoperation. In this case, a semiconductor memory device in which the SRAMcells 1, the sub-word drivers SWD21, the sense amplifiers SA11 or SA12,and the source potential generation circuits SLC1 are combined with eachother is obtained as the memory cell in the configuration shown in FIG.29.

FIGS. 32A to 32D show operation waveforms of (a) “0” reading operation,(b) “1” reading operation, (c) “0” writing operation, and (d) “1”writing operation in a memory cell of a semiconductor memory device inwhich the SRAM cells 1, the sub-word drivers SWD21, the sense amplifiersSA11 or SA12, and the source potential generation circuits SLC1 arecombined with each other as described above. This configuration differsfrom the components of the semiconductor memory device exhibiting theoperation waveforms shown in FIGS. 30A to 30D in that the sub-worddrivers SWD11 are changed to SWD21. Accordingly, the low level of thewrite word line WWL from the sub-word driver SWD21 is lowered from theground potential GND to the negative potential VS1 for a non-selectedcell only during a writing cycle. Other operation waveforms are the sameas in FIGS. 30A to 30D, and the details of the operation waveforms areomitted.

As another combination of components, it is assumed that the accesstransistor N4 of the SRAM cell 1 is a normal threshold voltagetransistor and that a low level from the sub-word driver corresponds toa low potential power source. At that time, it is assumed that aretention time of the storage node V2 in the SRAM cell 1 is shorter thana writing time and that erroneous writing is caused in a non-selectedcell in a writing operation. In this case, a semiconductor memory devicein which the SRAM cells 1, the sub-word drivers SWD21, the senseamplifiers SA11 or SA12, and the source potential generation circuitsSLC2 are combined with each other is obtained as the memory cell in theconfiguration shown in FIG. 29.

FIGS. 33A to 33D show operation waveforms of (a) “0” reading operation,(b) “1” reading operation, (c) “0” writing operation, and (d) “1”writing operation in a memory cell of a semiconductor memory device inwhich the SRAM cells 1, the sub-word drivers SWD21, the sense amplifiersSA11 or SA12, and the source potential generation circuits SLC2 arecombined with each other. This configuration differs from the componentsof the semiconductor memory device exhibiting the operation waveformsshown in FIGS. 31A to 31D in that the source potential generationcircuits SLC1 is changed to the source potential generation circuitsSLC2. Accordingly, the low level of the write word line WWL from thesub-word driver SWD21 is lowered from the low potential power source VS2to the ground potential GND for a non-selected cell only during awriting cycle. Other operation waveforms are the same as in FIGS. 31A to31D, and the details of the operation waveforms are omitted.

In the present embodiment, by combining the memory cell 1 with the senseamplifiers and the sub-word driver circuits, it is possible to obtain asemiconductor memory device capable of preventing data corruption in areading operation and erroneous writing in a writing operation andoperating at a high speed with a minimum number of transistors.

(Embodiment 7)

An example of a semiconductor memory device in which the senseamplifiers and the sub-word drivers are combined with the SRAM cell 2 inthe second embodiment will be described in Embodiment 7 of the presentinvention with reference to FIGS. 34 to 37D. However, semiconductormemory devices in which the sense amplifiers and the sub-word driversare applicable to the SRAM cell 2 are not limited to the semiconductormemory device in the present invention. As a matter of course, those maybe combined with and applied to various types of semiconductor memorydevices. The write word line WWL to the SRAM cell 2 has a one-shot pulseactivated only at an initial stage of a writing cycle. The generationcircuits WPBC2 are used for the inverse write block signal WPB.

The entire configuration of this semiconductor memory device is the sameas that in the FIG. 27. FIG. 34 shows a specific example of the memoryblock 1 shown in FIG. 27. The memory block 1 is formed by sub-worddrivers 22, sense amplifiers 23, and a control part 24, which aredisposed around a memory cell array 21 having (m-word)×(n-bit)configuration. The sub-word driver 22 selects one word line of thememory cell array 21 with using an inverse main word line WLB inputtedfrom the main word driver 2, an inverse read block signal RPB, and aninverse write block signal WPB. The sense amplifier 23 amplifies asignal of a bit line connected to the memory cell array 21 and transmitsit to a data line of the Y-decoder and data input/output part 3 in areading operation. Conversely, the sense amplifier 23 writes a signalfrom the data line into the memory cell array in a writing operation.The control part 24 includes therein a wiring portion for controlsignals or an amplifier circuit for control signals.

FIG. 35 shows another specific example of the memory block 1 shown inFIG. 27, in which inverse write block signal generation circuits WPBC2are disposed in a control part 24. Since an inverse write block signalWPB is generated in the control part 24, it is possible to reduce adrive capacity of the generation circuits and shorten a delay time ofthe inverse write block signal WPB. The inverse write block signalgeneration circuit WPBC2 is a circuit for generating an inverse writeblock signal WPB of a one-shot low level at an initial stage of awriting cycle. The write enable signal WE, the delay write enable signalWE2, and the inverse read block signal RPB are inputted to the inversewrite block signal generation circuits WPBC2, and an inverse write blocksignal WPB is generated by the inverse write block signal generationcircuits WPBC2.

In the SRAM cell 2, the source terminal of the access transistor N4 iscontinuously connected to the ground potential GND, and no erroneouswriting to a non-selected cell is caused in a writing operation.Accordingly, a source potential generation circuit for the SRAM cell 1is not needed. A constant level of the ground potential GND or the lowpotential power source VS2 is applied as a low level “0” of the sub-worddrivers.

FIGS. 36A to 36D show operation waveforms in a semiconductor memorydevice in which the SRAM cells 2 having an access transistor N4 of a lowthreshold voltage transistor, the sub-word drivers SWD11 outputting aground potential GND as a low level, and the sense amplifiers SA21 orSA22 are combined with each other. FIG. 36A shows “0” reading operation,FIG. 36B “1” shows reading operation, FIG. 36C “0” writing operation,and FIG. 36D shows “1” writing operation.

FIGS. 36A and 36B show waveforms of the “0” and “1” reading operations.The pre-charge signal PC is brought into a high level so that apre-charge operation is completed. The read word line RWL is broughtinto a high level so as to bring the access transistor N3 intoconduction. The stored data “0” or “1” of the storage node V1 in thememory cell are read into the read bit line RBL, amplified by the senseamplifier, and transmitted to the data line DL (or the read data lineRDL). Thus, a reading operation is performed. At that time, signals forwriting do not change. These operations are the same as the operationsof the sense amplifiers SA11 and SA12 (the same as those in FIGS. 17A to17D).

In the case of the “0” writing operation shown in FIG. 36C, thepre-charge signal PC and the write enable signal WE are brought into ahigh level so as to stop a pre-charge operation. The read word line RWLand the write word line are brought into a high level, so that data “0”from the data line DL (or the write data line WDL) are written into thestorage node V1. The storage node V2 is brought into an intermediatepoint by conduction of the load transistor P2 and the access transistorN4. The one-shot pulse of the write word line WWL is changed into a lowlevel, so that a high level “1” is written into the storage node V2 bythe load transistor P2. The read word line RWL, the write enable signalWE, and the pre-charge signal PC are brought into a low level, and awriting cycle is completed.

In the case of the “1” writing operation shown in FIG. 36D, thepre-charge signal PC and the write enable signal WE are brought into ahigh level so as to stop a pre-charge operation. The read word line RWLand the write word line are brought into a high level, so that data “1”from the data line DL (or the write data line WDL) are written into thestorage node V1. Data “0” are written into the storage node V2 byconduction of the access transistor N4. The one-shot pulse of the writeword line WWL is changed into a low level, and the read word line RWL,the write enable signal WE, and the pre-charge signal PC are broughtinto a low level. Thus, a writing cycle is completed.

FIGS. 37A to 37D show operation waveforms in a semiconductor memorydevice in which the SRAM cells 2 having an access transistor N4 of anormal threshold voltage transistor, the sub-word drivers SWD12outputting a low potential power source VS2 as a low level, and thesense amplifiers SA21 or SA22 are combined with each other. FIG. 36Ashows “0” reading operation, FIG. 36B shows “1” reading operation, FIG.36C shows “0” writing operation, and FIG. 36D shows “1” writingoperation.

FIGS. 37A to 37D differ from FIGS. 36A to 36D only in that the low level“0” of the write word line WWL is a low potential power source VS2.Other operations are the same as in FIGS. 36A to 36D. The details ofthose operations are omitted.

In the present embodiment, by combining the memory cell 1 with the senseamplifiers and the sub-word driver circuits, it is possible to obtain asemiconductor memory device capable of preventing data corruption in areading operation and erroneous writing in a writing operation andoperating at a high speed with a minimum number of transistors.

Although the present invention has been described in detail based on theembodiments, it is not limited to the aforementioned embodiments. As amatter of course, it should be understood that various changes may bemade therein without departing from the scope of the present invention.

1. A semiconductor device having a sense amplifier, sense amplifiercomprising: a read bit line and a write bit line for performing datatransmission to a memory cell; a data line for performing datatransmission to an input-output circuit; an inverter circuit using saidread bit line as an input; data reading means for transmitting an outputof said inverter circuit to said data line; first data writing means fortransmitting data from said data line to said read bit line using awrite enable signal; second data writing means for transmitting inversedata of data from said data line to said write bit line using an inversewrite enable signal; and pre-charging means for pre-charging said readbit line and level maintaining means using the output of said invertercircuit as an input for maintaining said read bit line at a high levelwhen the output has a low level.
 2. The semiconductor memory device asrecited in claim 1, wherein said data line is formed by a read data lineconnected to said reading means and a write data line connected to saidfirst and second writing means.
 3. A semiconductor device having a senseamplifier, said sense amplifier comprising: a read bit line forperforming data transmission to a memory cell; a data line forperforming data transmission to an input-output circuit; an invertercircuit using said read bit line as an input; reading means fortransmitting an output of said inverter circuit to said data line; datawriting means for transmitting data from said data line to said read bitline using a write enable signal; and pre-charging means forpre-charging said read bit line and level maintaining means using theoutput of said inverter circuit as an input for maintaining said readbit line at a high level when the output has a low level.
 4. Thesemiconductor memory device as recited in claim 3, wherein said dataline is formed by a read data line connected to said reading means and awrite data line connected to said writing means.